DocumentCode
2282568
Title
Asymmetry, Vacancy Engineering and Mechanism for Bipolar RRAM
Author
Gilmer, D.C. ; Bersuker, G. ; Koveshnikov, S. ; Jo, M. ; Kalantarian, A. ; Butcher, B. ; Geer, R. ; Nishi, Y. ; Kirsch, P.D. ; Jammy, Raj
Author_Institution
SEMATECH, Austin, TX, USA
fYear
2012
fDate
20-23 May 2012
Firstpage
1
Lastpage
4
Abstract
The metal-oxide filament-based resistance change RAM (RRAM) have a preference toward bi-polar operation. For the first time, the mechanisms behind the operational bias and polarity preference, and the related ramifications for vacancy engineering toward improved bipolar RRAM operations, are explained. Experimental results support detailed models and demonstrate advantages of asymmetric oxygen vacancy engineering with 100% yielding RRAM devices fabricated with the preferred oxygen vacancy profile.
Keywords
random-access storage; asymmetric oxygen vacancy engineering; bipolar RRAM operations; metal-oxide filament-based resistance change RAM; Anodes; Films; Hafnium compounds; Oxidation; Resistance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location
Milan
Print_ISBN
978-1-4673-1079-6
Type
conf
DOI
10.1109/IMW.2012.6213649
Filename
6213649
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