DocumentCode
2282585
Title
A method for unified treatment of interface conditions suitable for device simulation
Author
Simlinger, T. ; Rottinger, M. ; Selberherr, S.
Author_Institution
Inst. fur Microelectron., Tech. Univ. Vienna, Austria
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
173
Lastpage
176
Abstract
A method is presented which allows for a unified treatment of interface conditions covering also both extreme cases, Dirichlet and Neumann boundary conditions. This unified treatment is especially useful if the type of the interface condition depends on the internal state of the device. The method is applied to a heterojunction interface where thermionic field emission and tunneling is assumed.
Keywords
p-n junctions; semiconductor device models; Dirichlet boundary conditions; Neumann boundary conditions; device simulation; heterojunction interface; interface conditions; thermionic field emission; tunneling; unified treatment; Analytical models; Boundary conditions; Charge carrier processes; Heterojunctions; Microelectronics; Numerical models; Semiconductor devices; Standards development; Thermionic emission; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621365
Filename
621365
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