DocumentCode :
2282599
Title :
Abnormal growth of intermetallic compounds in asymmetrical Cu/Sn/Ag couples
Author :
Zou, H.F. ; Zhang, Z.F.
Author_Institution :
Shenyang Nat. Lab. for Mater. Sci., Chinese Acad. of Sci., Shenyang, China
fYear :
2010
fDate :
16-19 Aug. 2010
Firstpage :
418
Lastpage :
421
Abstract :
The current study revealed that the growth kinetics and the interfacial reaction of the Cu/Sn/Ag couples with different thickness solder. For the Cu/Sn/Ag couples, plate-type Ag3Sn was firstly formed at the Sn/Cu interface rather than at the Sn/Ag interface for the Cu/Sn/Ag couple at the initial state of the reflow procedure when the solder thicknesses is 150 μm or 300 μm. Besides, the microstructure of the Cu/Sn interface was different from that of Ag/Sn interface for the Cu/Sn (300 μm)/Ag couple. With increasing reflow time to 60 s, plate-type Ag3Sn was detected at Sn/Ag and Sn/Cu interfaces, and the columnar Cu6Sn5 grains were also observed at the Cu/Sn interface for the Ag/Sn (150 μm)/Cu couple under liquid-state condition. However, for the Cu/Sn(40 μm)/Ag couple, columnar Cu6Sn5 and plate-type Ag3Sn were not observed, and few Cu-Sn IMC particles were observed in the solder even after long time aging. The growth kinetics of intermetallic compounds was also investigated for the Cu/Sn/Ag couples with different thickness solder.
Keywords :
copper alloys; reflow soldering; silver alloys; tin alloys; Cu-Sn-Ag; abnormal growth; asymmetrical couples; growth kinetics; interfacial reaction; intermetallic compounds; reflow procedure; size 150 mum; size 300 mum; size 40 mum; Aging; Copper; Electronics packaging; Microstructure; Morphology; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-8140-8
Type :
conf
DOI :
10.1109/ICEPT.2010.5582863
Filename :
5582863
Link To Document :
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