Recent Advances in Spin Torque MRAM

Author

Worledge, D.C. ; Gajek, M. ; Abraham, D.W. ; Brown, S. ; Gaidis, M.C. ; Hu, G. ; Nowak, J. ; O´Sullivan, Eugene J. ; Robertazzi, R.P. ; Sun, J.Z. ; Trouilloud, P.L. ; Gallagher, W.J.

Author_Institution

IBM-MagIC MRAM Alliance, IBM TJ Watson Res. Center, Yorktown Heights, NY, USA

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

3

Abstract

The switching current of Spin Torque Magnetic Random Access Memory (MRAM) can be reduced significantly by using perpendicularly magnetized materials. The Ta|CoFeB|MgO system provides both high tunneling magnetoresistance and perpendicular anisotropy. Using this materials system we have demonstrated basic write functionality in fully integrated Spin Torque MRAM arrays. Here, we further demonstrate device scaling down to 20 nm diameter, opening up the possibility of ultra-dense Spin Torque MRAM.

Keywords

MRAM devices; boron compounds; cobalt compounds; iron compounds; magnesium compounds; magnetic tunnelling; magnetoresistance; tantalum compounds; Ta-CoFeB-MgO; device scaling; materials system; perpendicular anisotropy; perpendicularly magnetized material; size 20 nm; spin torque MRAM array; spin torque magnetic random access memory; switching current; tunneling magnetoresistance; ultra-dense spin torque MRAM; write functionality; Junctions; Magnetic hysteresis; Magnetic multilayers; Magnetic tunneling; Sun; Switches; Torque;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213652

Filename

6213652