DocumentCode
2282765
Title
Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell
Author
Shim, Keon-Soo ; Choi, Eun-Seok ; Jung, Sung-Wook ; Kim, Se-Hoon ; Yoo, Hyun-Seung ; Jeon, Kwang-Sun ; Joo, Han-Soo ; Oh, Jung-Seok ; Jang, Yoon-Soo ; Park, Kyung-Jin ; Choi, Sang-Moo ; Lee, Sang-Bum ; Koh, Jeong-Deog ; Lee, Ki-Hong ; Lee, Ju-Yeab ; Oh, S
Author_Institution
R&D Div, Hynix Semicond. Inc., Icheon, South Korea
fYear
2012
fDate
20-23 May 2012
Firstpage
1
Lastpage
4
Abstract
Program disturbance characteristics of 3D vertical NAND Flash cell array architecture have been investigated intensively. A new ´program Y disturbance´ mode peculiar to 3D NAND Flash cell is defined. Swing characteristics of poly-Si channel and increased NOP (number of program) stress have been compared with 2D planar NAND Flash cell. In this paper, new program method pertinent to 3D NAND Flash memory was proposed to obtain program disturbance characteristics for MLC.
Keywords
NAND circuits; flash memories; 2D planar NAND flash cell; 3D vertical NAND flash cell array architecture; MLC; NOP stress; number of program stress; program Y disturbance; program disturbance; program disturbance characteristics; Arrays; DSL; Flash memory; Microprocessors; Three dimensional displays; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location
Milan
Print_ISBN
978-1-4673-1079-6
Type
conf
DOI
10.1109/IMW.2012.6213659
Filename
6213659
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