Title :
Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage
Author :
Kang, J.F. ; Gao, B. ; Chen, B. ; Liu, L.F. ; Liu, X.Y. ; Yu, H.Y. ; Wang, Z.R. ; Yu, B.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy.
Keywords :
hafnium compounds; random-access storage; defect engineering based implementation; hafnium oxide based RRAM devices; material oriented cell engineering; multilevel data storage; oxygen vacancy conducting filaments; resistive random access memory; resistive switching layer; Educational institutions; Electrical resistance measurement; Hafnium compounds; Memory; Resistance; Switches;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213664
