Synthesis and characterization of silicon carbide (SiC) microstructures

Author

Legba, E. Thymour ; Olida, Nikki ; Hunley, D. Patrick ; Omer, Ingrid St

Author_Institution

Dept. of Electr. & Comput. Eng., Kentucky Univ., Lexington, KY

fYear

2007

fDate

22-25 March 2007

Firstpage

783

Lastpage

786

Abstract

The purpose of this research was to synthesize and physically characterize silicon carbide microtubes. This was done by reacting silicon monoxide (SiO) powder with multi-walled carbon nanotubes (MWCNTs) at high temperature. Several experiments were conducted under vacuum in a high-temperature furnace varying temperature (1300degC-1450degC), time and reactant material mass. The resulting samples were then physically characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD analysis revealed the presence of dominant beta-silicon carbide phases. SEM images revealed a unique morphology in comparison with the starting materials.

Keywords

X-ray diffraction; carbon nanotubes; powders; scanning electron microscopy; silicon compounds; SiC; SiO; X-ray diffraction; multi-walled carbon nanotubes; scanning electron microscopy; silicon carbide microstructures; silicon monoxide powder; Carbon nanotubes; Conducting materials; Furnaces; Microstructure; Powders; Scanning electron microscopy; Silicon carbide; Temperature; X-ray imaging; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

SoutheastCon, 2007. Proceedings. IEEE

Conference_Location

Richmond, VA

Print_ISBN

1-4244-1028-2

Electronic_ISBN

1-4244-1029-0

Type

conf

DOI

10.1109/SECON.2007.343008

Filename

4147538