Title :
A pocket implant model for sub-0.18 micron CMOS process flows
Author :
Vasanth, K. ; Nandakumar, M. ; Rodder, M. ; Sridhar, S. ; Mozumder, P.K. ; Chen, I.-C.
Author_Institution :
Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
In this paper we present a method of arriving at dopant distributions required for accurate performance estimation of 0.18 micron CMOS flows with pocket implants. Dopant profiles are calculated using a combination of physical and phenomenological models and measured device performance data. The method is demonstrated for NMOS and PMOS devices with varying pocket implant doses, energies and angles, and scaled supply voltages.
Keywords :
CMOS integrated circuits; MOSFET; doping profiles; impurity distribution; integrated circuit modelling; ion implantation; semiconductor device models; semiconductor process modelling; 0.18 micron; NMOS devices; PMOS devices; device performance data; dopant distributions; dopant profiles; performance estimation; phenomenological models; physical models; pocket implant model; scaled supply voltages; submicron CMOS process flows; Boron; CMOS process; Implants; Instruments; Ion implantation; MOS devices; Process design; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621367
