DocumentCode :
2282966
Title :
FRAM memory technology - advantages for low power, fast write, high endurance applications
Author :
Bailey, Rick ; Fox, Glen ; Eliason, Jarrod ; Depner, Marty ; Kim, Daesig ; Jabillo, Edwin ; Groat, John ; Walbert, John ; Moise, Ted ; Summerfelt, Scott ; Udayakumar, K.R. ; Rodriquez, John ; Remack, Keith ; Boku, K. ; Gertas, John
Author_Institution :
Ramtron Int. Corp., Colorado Springs, CO, USA
fYear :
2005
fDate :
2-5 Oct. 2005
Firstpage :
485
Abstract :
Summary form only given. FRAM memory technology offers a number of advantages over current memory technologies. For applications which require low power, fast write, or non-volatility with high write/read endurance, FRAM is quickly becoming the memory of choice. A number of commercial applications have been developed which benefit from these unique FRAM features and millions of units have been sold into these applications. In addition, FRAM technology offers a low cost solution for integration with logic arrays, analog, or SoC applications, especially for low power and portable electronic products. FRAM memory may also reduce or eliminate the need for multiple memory types embedded within SoC applications, thus reducing manufacturing cost and improving overall system performance. FRAM memory technology is also competitive with emerging new memory technologies, but is already commercially available. This paper will review the current technical capability of FRAM memory technology, its fundamental advantages or weaknesses with respect to other memory technologies, and its potential for integration into SoC, portable electronics, or other high functionality applications. We will highlight the electrical performance and reliability aspects of our latest 130nm gate, 5 level metal Cu/FSG 4MBit/ 8MBit FRAM technology driver.
Keywords :
embedded systems; ferroelectric storage; low-power electronics; random-access storage; reliability; system-on-chip; 130 nm; FRAM memory technology; FRAM technology driver; SoC applications; analog applications; electrical performance; logic arrays; low power products; manufacturing cost; portable electronic products; reliability; Costs; Ferroelectric films; Instruments; Logic arrays; Manufacturing; Nonvolatile memory; Random access memory; Springs; System performance; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 2005. ICCD 2005. Proceedings. 2005 IEEE International Conference on
Print_ISBN :
0-7695-2451-6
Type :
conf
DOI :
10.1109/ICCD.2005.60
Filename :
1524197
Link To Document :
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