• DocumentCode
    2283054
  • Title

    Analysis of hybrid-mode operation of SOI MOSFETs

  • Author

    Matloubian, Mishel

  • Author_Institution
    Technol. Center, Hughes Aircraft Co., Carlsbad, CA, USA
  • fYear
    1993
  • fDate
    5-7 Oct 1993
  • Firstpage
    107
  • Abstract
    In this paper, the characteristics of n-channel SOI MOSFETs in MOS and hybrid-modes of operation are simulated using standard MOS I-V equations. It is shown that the enhancement in drain current in the threshold region is only due to the reduction of the MOS threshold voltage by the applied positive body bias. Only for body voltages higher than 2φP does the BJT contribution to the drain current become significant
  • Keywords
    insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; BJT; MOS I-V equations; MOS threshold voltage; body bias; drain current; hybrid-mode operation; n-channel SOI MOSFETs; simulation; Body regions; Doping; Electrons; Equations; Heterojunctions; MOSFETs; Semiconductor films; Silicon; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1993. Proceedings., 1993 IEEE International
  • Conference_Location
    Palm Springs, CA
  • Print_ISBN
    0-7803-1346-1
  • Type

    conf

  • DOI
    10.1109/SOI.1993.344541
  • Filename
    344541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2283054