Title :
CMOS/DMOS power IC technology on thin-film SOI substrates
Author :
Dolny, G.M. ; Ipri, A.C. ; Batty, M.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
A power IC technology integrating low-voltage CMOS with high-voltage current, high-voltage DMOS on a thin-film SOI substrate has been successfully demonstrated. The low-voltage CMOS exhibit good electrical characteristics and the power DMOS can supply more than 3 A of current and is capable of withstanding 120 V
Keywords :
CMOS integrated circuits; MOS integrated circuits; integrated circuit technology; power integrated circuits; semiconductor-insulator boundaries; silicon; 120 V; 3 A; CMOS/DMOS power IC technology; electrical characteristics; high-voltage DMOS; high-voltage current; low-voltage CMOS; thin-film SOI substrates; CMOS logic circuits; CMOS process; CMOS technology; Electric variables; MOS devices; Power integrated circuits; Silicon on insulator technology; Substrates; Thin film circuits; Transistors;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344543
