Simulation of advanced-LOCOS capability for sub-0.25 micron CMOS isolation

Author

Jones, S.K. ; Bazley, D.J. ; Beanland, R. ; Badenes, G. ; Scaife, B.

Author_Institution

GEC Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

185

Lastpage

188

Abstract

The visco-elastic oxidation model has been calibrated on 0.35 and 0.25 /spl mu/m CMOS LOCOS-type isolation structures. Simulation is used to assess the capability of advanced LOCOS options for sub-0.25 micron CMOS. At reduced active area pitch the active-area lifting phenomenon restricts the thickness of field oxide which may be grown. Predictions of the maximum field oxide and active area encroachment are made for an active area pitch of 0.6 /spl mu/m.

Keywords

CMOS integrated circuits; isolation technology; semiconductor process modelling; 0.25 micron; LOCOS-type isolation structures; active area encroachment; active-area lifting phenomenon; advanced LOCOS capability; maximum field oxide prediction; simulation; submicron CMOS isolation; visco-elastic oxidation model; Calibration; Compressive stress; Materials science and technology; Oxidation; Semiconductor device modeling; Shape measurement; Silicon; Space technology; Temperature measurement; Viscosity;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621368

Filename

621368