Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

In this paper, we present a new empirical model able to explain the main features of set and reset processes in Ag-GeS₂ Conductive Bridging Memories. The model is carefully validated on a wide number of experimental data, precisely designed for this scope. In particular, electrical tests were performed both in quasi static and in pulse modes on industrial CBRAM cells. The simulations here reported provide new insights on the device operations as well as clear indications for the development of CBRAM compact-modeling suitable for design implementation.