DocumentCode
2283196
Title
Electrostatic gas valve for semiconductor manufacturing system
Author
Sato, Kazuo ; Shikida, Mitsuhiro
fYear
1994
fDate
2-4 Oct. 1994
Firstpage
131
Abstract
A new type of valve, made of silicon and electrostatically driven, is investigated to the application for gas control in semiconductor manufacturing equipment. This valve aims to be built in growth chambers or be integrated in an arrayed manner on a silicon wafer, thus minimizing dead volume and providing quicker response in operation. The valve allows an adequate amount of gas flow for rarefied pressure conditions and is also applicable under high pressures of several atmospheres
Keywords
Actuators; Conductive films; Control systems; Electrodes; Electrostatics; Fluid flow; Manufacturing systems; Silicon; Vacuum systems; Valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Machine and Human Science, 1994. Proceedings., 1994 5th International Symposium on
Conference_Location
Nagoya, Japan
Print_ISBN
0-7803-2095-6
Type
conf
DOI
10.1109/ISMMHS.1994.512911
Filename
512911
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