Title :
Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation
Author :
Wan Gee Kim ; Ja Yong Kim ; Ji Won Moon ; Moon Sig Joo ; Hye jung Choi ; Soo Gil Kim ; Kee Jeung Lee ; Kwon Hong ; Sung Ki Park
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
In this paper, the effect of tunnel barrier and device structure for the reliable and low power resistive switching operation was researched in the HfO2 based ReRAM system. From the experimental results, the Al2O3 thin layer as the tunnel barrier lowered the operation current and improved thermal stability for the stable switching operation. Moreover, the additional decrease of the operation current was achieved through the cell size drop with the stable cell structure.
Keywords :
alumina; low-power electronics; random-access storage; thermal stability; tunnelling; Al2O3; HfO2; ReRAM; alumin thin layer; cell size drop; device structure; low power operation; operation current; resistive switching operation; stable cell structure; stable switching operation; thermal stability; tunnel barrier; Aluminum oxide; Hafnium compounds; Materials; Reliability; Resistors; Switches; Tin;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213681
