DocumentCode :
2283242
Title :
Flotation measurements to reveal the reason for the discrepancy in the molar volume of silicon
Author :
Bettin, H. ; Toth, H.
Author_Institution :
Phys. Tech. Bundesanstalt, Braunschweig, Germany
fYear :
2002
fDate :
16-21 June 2002
Firstpage :
298
Lastpage :
299
Abstract :
Silicon single crystals are used to determine the Avogadro constant on the basis of the ratio of molar volume and atomic volume. To reveal the reason for the discrepancy in the molar volume of silicon found in crystals of different origin, the densities of crystals grown under different conditions were compared using a flotation method. The method and the results obtained are reported and the uncertainty is discussed.
Keywords :
constants; crystals; density measurement; measurement uncertainty; silicon; Avogadro constant determination; Si; Si crystal molar volume discrepancy; crystal growth; measurement uncertainty; molar volume/atomic volume ratio; silicon single crystal flotation density measurements; Calibration; Crystals; Density measurement; Electrical resistance measurement; Pressure measurement; Silicon; Solids; Temperature; Thermal expansion; Volume measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location :
Ottawa, Ontario, Canada
Print_ISBN :
0-7803-7242-5
Type :
conf
DOI :
10.1109/CPEM.2002.1034839
Filename :
1034839
Link To Document :
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