DocumentCode
2283261
Title
The Design of 3.6GHz 4.2GHz Low Noise Amplifier
Author
Wei-Ming, Yang ; Li-Ping, He ; Bin, Yang ; Wan-Bo, Xie ; Chen, Shi ; Jian-xin, Chen
Author_Institution
Hubei Univ., Wuhan
fYear
2007
fDate
16-17 Aug. 2007
Firstpage
458
Lastpage
461
Abstract
A two-stage broadband low noise amplifier (LNA) was designed. The LNa was implemented on a Teflon substrate using GaAs FET ATF-10136 and PHEMT ATF-34143 with micro-strip circuit technology. This LNA resulted in a noise figure of 1.1dB, and 21 dB gain over 3.6 to 4.2 GHz range. The input and output VSWR are all less than 2.8. The computer simulated results were coincident with that of the test.
Keywords
III-V semiconductors; broadband networks; field effect transistors; gallium arsenide; low noise amplifiers; microstrip circuits; FET; GaAs; GaAs - Interface; PHEMT; Teflon substrate; computer simulation; frequency 3.6 GHz to 4.2 GHz; gain 21 dB; microstrip circuit technology; noise figure 1.1 dB; two stage broadband low noise amplifier; Broadband amplifiers; Circuit noise; Circuit simulation; Computational modeling; FETs; Gain; Gallium arsenide; Low-noise amplifiers; Noise figure; PHEMTs; Micro-strip matching; broadband; low noise amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2007 International Symposium on
Conference_Location
Hangzhou
Print_ISBN
978-1-4244-1045-3
Electronic_ISBN
978-1-4244-1045-3
Type
conf
DOI
10.1109/MAPE.2007.4393650
Filename
4393650
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