Title :
The Design of 3.6GHz 4.2GHz Low Noise Amplifier
Author :
Wei-Ming, Yang ; Li-Ping, He ; Bin, Yang ; Wan-Bo, Xie ; Chen, Shi ; Jian-xin, Chen
Author_Institution :
Hubei Univ., Wuhan
Abstract :
A two-stage broadband low noise amplifier (LNA) was designed. The LNa was implemented on a Teflon substrate using GaAs FET ATF-10136 and PHEMT ATF-34143 with micro-strip circuit technology. This LNA resulted in a noise figure of 1.1dB, and 21 dB gain over 3.6 to 4.2 GHz range. The input and output VSWR are all less than 2.8. The computer simulated results were coincident with that of the test.
Keywords :
III-V semiconductors; broadband networks; field effect transistors; gallium arsenide; low noise amplifiers; microstrip circuits; FET; GaAs; GaAs - Interface; PHEMT; Teflon substrate; computer simulation; frequency 3.6 GHz to 4.2 GHz; gain 21 dB; microstrip circuit technology; noise figure 1.1 dB; two stage broadband low noise amplifier; Broadband amplifiers; Circuit noise; Circuit simulation; Computational modeling; FETs; Gain; Gallium arsenide; Low-noise amplifiers; Noise figure; PHEMTs; Micro-strip matching; broadband; low noise amplifier;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2007 International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-1045-3
Electronic_ISBN :
978-1-4244-1045-3
DOI :
10.1109/MAPE.2007.4393650
