Title :
The Research of a L Band Low Noise Cryogenic Amplifier Basing on PHEMT
Author :
Dongsheng, Wu ; Qiansheng, Fang
Author_Institution :
Anhui Inst.of Archit.& Ind., Hefei
Abstract :
In this paper, a L-band low noise cryogenic amplifier using PHEMT is reported. The cryogenic performance of PHEMT and the stability of the circuit are discussed. The design, and experimental results are also presented. At liquid nitrogen temperature, in the frequency of band range from 1.7GHz to 1.9GHz, the cryogenic LNA can achieve following performance : gain more then 21dB, gain plainness less then 1dB, noise figure less then 0.3dB, the input VSWR1 less then 1.3 and the output VSWR2 less then 1.3.
Keywords :
UHF amplifiers; high electron mobility transistors; low noise amplifiers; low-temperature techniques; L band low noise cryogenic amplifier; LNA; PHEMT; frequency 1.7 GHz to 1.9 GHz; liquid nitrogen temperature; pseudomorphic high electron mobility transistors; Circuit noise; Circuit stability; Cryogenics; Frequency; L-band; Low-noise amplifiers; Nitrogen; PHEMTs; Performance gain; Temperature distribution;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2007 International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-1045-3
Electronic_ISBN :
978-1-4244-1045-3
DOI :
10.1109/MAPE.2007.4393652
