Title :
Concurrent technology, device, and circuit development for EEPROMs
Author :
Kakoschke, R. ; Miura-Mattausch, M. ; Feldmann, U. ; Schraud, G.
Author_Institution :
Semicond. Div., Siemens AG, Munich, Germany
Abstract :
Circuit simulation enters into a new stage of enhanced importance. From the conventional circuit simulator for circuit design an active tool for concurrent engineering is emerging, which allows to integrate technology, device and circuit development in parallel. We will show here an EEPROM development case, which has been done on a transient circuit simulation level from the beginning. A precise unified EEPROM cell model was developed describing all characteristics with surface potentials dependent on technological parameter values. This new model enabled us to realize the requested circuitry goals from the first wafer run.
Keywords :
EPROM; circuit analysis computing; concurrent engineering; integrated circuit modelling; integrated circuit technology; transient analysis; EEPROM cell model; concurrent engineering; device technology; surface potential; transient circuit simulation; Charge measurement; Circuit simulation; Current measurement; EPROM; Loss measurement; Pulse circuits; Pulse measurements; Semiconductor device modeling; Threshold voltage; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621370
