Concurrent technology, device, and circuit development for EEPROMs

Author

Kakoschke, R. ; Miura-Mattausch, M. ; Feldmann, U. ; Schraud, G.

Author_Institution

Semicond. Div., Siemens AG, Munich, Germany

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

193

Lastpage

196

Abstract

Circuit simulation enters into a new stage of enhanced importance. From the conventional circuit simulator for circuit design an active tool for concurrent engineering is emerging, which allows to integrate technology, device and circuit development in parallel. We will show here an EEPROM development case, which has been done on a transient circuit simulation level from the beginning. A precise unified EEPROM cell model was developed describing all characteristics with surface potentials dependent on technological parameter values. This new model enabled us to realize the requested circuitry goals from the first wafer run.

Keywords

EPROM; circuit analysis computing; concurrent engineering; integrated circuit modelling; integrated circuit technology; transient analysis; EEPROM cell model; concurrent engineering; device technology; surface potential; transient circuit simulation; Charge measurement; Circuit simulation; Current measurement; EPROM; Loss measurement; Pulse circuits; Pulse measurements; Semiconductor device modeling; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621370

Filename

621370