Title : 
Effects of self-heating-induced negative output conductance in SOI circuits
         
        
            Author : 
Fox, R.M. ; Brodsky, J.S.
         
        
            Author_Institution : 
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
         
        
        
        
        
        
            Abstract : 
Numerous authors have observed that self-heating can lead to negative output conductance in SOI MOSFETs. To date little consideration has been given to the effects of such behavior on circuit operation. This paper presents a first-order analysis of self-heating effects on circuits, and demonstrates through simulation and analysis that self-heating can cause even simple circuits to exhibit complicated nonlinear behavior. Heat-flow analysis shows that thermal resistances in contemporary SOI technologies are large enough that such effects are possible in practical circuits
         
        
            Keywords : 
MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; simulation; thermal analysis; thermal resistance; SOI circuits; Si; circuit operation; first-order analysis; heat-flow analysis; self-heating effects; self-heating-induced negative output conductance; simulation; thermal resistances; Cause effect analysis; Circuit simulation; Hysteresis; Inverters; MOSFETs; Resistance heating; Semiconductor device modeling; Temperature sensors; Thermal resistance; Voltage;
         
        
        
        
            Conference_Titel : 
SOI Conference, 1993. Proceedings., 1993 IEEE International
         
        
            Conference_Location : 
Palm Springs, CA
         
        
            Print_ISBN : 
0-7803-1346-1
         
        
        
            DOI : 
10.1109/SOI.1993.344555