DocumentCode :
2283376
Title :
Effects of self-heating-induced negative output conductance in SOI circuits
Author :
Fox, R.M. ; Brodsky, J.S.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear :
1993
fDate :
5-7 Oct 1993
Firstpage :
152
Lastpage :
153
Abstract :
Numerous authors have observed that self-heating can lead to negative output conductance in SOI MOSFETs. To date little consideration has been given to the effects of such behavior on circuit operation. This paper presents a first-order analysis of self-heating effects on circuits, and demonstrates through simulation and analysis that self-heating can cause even simple circuits to exhibit complicated nonlinear behavior. Heat-flow analysis shows that thermal resistances in contemporary SOI technologies are large enough that such effects are possible in practical circuits
Keywords :
MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; simulation; thermal analysis; thermal resistance; SOI circuits; Si; circuit operation; first-order analysis; heat-flow analysis; self-heating effects; self-heating-induced negative output conductance; simulation; thermal resistances; Cause effect analysis; Circuit simulation; Hysteresis; Inverters; MOSFETs; Resistance heating; Semiconductor device modeling; Temperature sensors; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
Type :
conf
DOI :
10.1109/SOI.1993.344555
Filename :
344555
Link To Document :
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