Title :
Subthreshold slope of accumulation-mode p-channel SOI MOSFETs
Author :
Colinge, J.P. ; De Wiele, F. Van ; Flandre, D.
Author_Institution :
Univ. Catholique de Louvain, Belgium
Abstract :
There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+α) where α is equal to the ratio Cbb /Cox1. In other words, α is the ratio between the capacitance of the structure below the channel and that of the structure above it. Cbb is equal to Cdepl, Csi and (Csi in series with Cox2) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S
Keywords :
capacitance; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; Si; accumulation-mode; analytical model; capacitance; fully depleted SOI devices; p-channel SOI MOSFETs; potential distribution; subthreshold slope; Analytical models; Capacitance; Electron devices; MOSFETs; Medical simulation; Numerical simulation; Semiconductor films; Silicon; Subthreshold current; Voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344558
