Subthreshold slope of accumulation-mode p-channel SOI MOSFETs

Author

Colinge, J.P. ; De Wiele, F. Van ; Flandre, D.

Author_Institution

Univ. Catholique de Louvain, Belgium

fYear

1993

fDate

5-7 Oct 1993

Firstpage

146

Lastpage

147

Abstract

There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+α) where α is equal to the ratio C_bb/C_ox1. In other words, α is the ratio between the capacitance of the structure below the channel and that of the structure above it. C_bb is equal to C_depl, C_si and (C_si in series with C_ox2) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S

Keywords

capacitance; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; Si; accumulation-mode; analytical model; capacitance; fully depleted SOI devices; p-channel SOI MOSFETs; potential distribution; subthreshold slope; Analytical models; Capacitance; Electron devices; MOSFETs; Medical simulation; Numerical simulation; Semiconductor films; Silicon; Subthreshold current; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344558

Filename

344558