Title :
Scale length determination of Gate all around (regular pentagonal cross section) fully depleted junction less transistor
Author :
Sarma, Kaushik Chandra Deva ; Sharma, Shantanu
Author_Institution :
Dept. of Electron. & Commun., CIT, Kokrajhar, India
Abstract :
This paper presents a method for scale length determination of a Gate all around (regular pentagonal cross section) fully depleted Junctionless transistor (JLT). The scale length expression is obtained by solving the 3D Poisson´s equation. Variation of scale length with gate oxide thickness, side length of pentagon and dielectric constant is shown. The Transverse electrostatic potential profile is also shown for different values of gate voltage, gate oxide thickness, side length of pentagon, channel length and drain voltage. The Central electrostatic potential profile is also shown for different values of gate oxide thickness, side length of pentagon, gate voltage and drain voltage.
Keywords :
Poisson equation; electrostatics; field effect transistors; permittivity; 3D Poisson equation; JLT; central electrostatic potential profile; channel length; dielectric constant; drain voltage; gate all around fully depleted junction less transistor; gate oxide thickness; gate voltage; pentagon side length; regular pentagonal cross section fully depleted junction less transistor; scale length determination method; transverse electrostatic potential profile; Dielectrics; Logic gates; Silicon; JLT; Pentagonal Cross Section; Poisson´s equation; Scale length;
Conference_Titel :
Advances in Engineering and Technology Research (ICAETR), 2014 International Conference on
Conference_Location :
Unnao
DOI :
10.1109/ICAETR.2014.7012831
