Title :
A model for double snapback phenomena in N channel SOI MOSFETs
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Abstract :
In the double snapback phenomenon exhibited by a N channel MOSFET, the device is observed to switch from the first to the second snapback states. The first snapback can be attributed to either an MOS or bipolar feedback mechanism. This paper proposes a physical model that is able to provide explanations for the observed dependance of second snapback on the gate voltage and the channel length
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; Si; channel length; double snapback phenomena; gate voltage; n-channel SOI MOSFETs; physical model; Electrical resistance measurement; Electrons; Feedback; Immune system; MOSFETs; Solid state circuits; Switches; Voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344566
