DocumentCode
2283596
Title
A model for double snapback phenomena in N channel SOI MOSFETs
Author
Huang, J.S.T.
Author_Institution
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
fYear
1993
fDate
5-7 Oct 1993
Firstpage
122
Lastpage
123
Abstract
In the double snapback phenomenon exhibited by a N channel MOSFET, the device is observed to switch from the first to the second snapback states. The first snapback can be attributed to either an MOS or bipolar feedback mechanism. This paper proposes a physical model that is able to provide explanations for the observed dependance of second snapback on the gate voltage and the channel length
Keywords
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; Si; channel length; double snapback phenomena; gate voltage; n-channel SOI MOSFETs; physical model; Electrical resistance measurement; Electrons; Feedback; Immune system; MOSFETs; Solid state circuits; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344566
Filename
344566
Link To Document