DocumentCode :
2283614
Title :
RIE of III-V materials using CH/sub 4/ or CH/sub 3/Cl in H/sub 2/
Author :
Tew, G.S. ; Bunce, R.W. ; Thomas, H.
Author_Institution :
Sch. of Eng., Univ. of Wales Coll. of Cardiff, UK
fYear :
1995
fDate :
5-8 June 1995
Firstpage :
180
Abstract :
Summary form only given. The desire to progress away from the highly corrosive, chlorine based reactive ion etching of III-V semiconductor materials has lead to the development of metal organic reactive ion etching, where methane, diluted in an inert gas, is the reactive species. For our experiments, we used hydrogen to dilute the methane since this plasma system provides very smooth etch profiles in a less corrosive environment. The methane/hydrogen RIE process was investigated by studying the effect etch parameters had on both the etch rate variations of a variety of III-V optoelectronic materials, such as InP, GaAs, Al/sub 0.6/Ga/sub 0.4/As and indium tin oxide, ITO and the electrical characteristics of surface damaged Au/GaAs Schottky diodes.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; indium compounds; semiconductor materials; sputter etching; Al/sub 0.6/Ga/sub 0.4/As; Au-GaAs; GaAs; H/sub 2/; III-V materials; III-V optoelectronic materials; InP; InSnO; RIE; chloromethane; electrical characteristics; etch rate variations; metal organic reactive ion etching; methane; surface damaged Au/GaAs Schottky diodes; Etching; Gallium arsenide; Hydrogen; III-V semiconductor materials; Indium phosphide; Indium tin oxide; Lead compounds; Plasma applications; Plasma materials processing; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
Conference_Location :
Madison, WI, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-2669-5
Type :
conf
DOI :
10.1109/PLASMA.1995.531672
Filename :
531672
Link To Document :
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