Title :
SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology
Author :
Kang, Won-gu ; Kang, Suny-won ; Lyu, Jong-Son ; Kang, Sang-won ; Lee, Jin-hyo
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
N-channel SOI MOSFET was fabricated by using the silicon direct bonding (SDB) technology, where its body was tied with a grounded p+ polysilicon for eliminating the substrate floating effect. Fabricated SOI MOSFETs show no kinks on their drain current characteristics and much higher breakdown voltage for lower gate voltages, as compared with SOI MOSFETs with a floating body
Keywords :
MOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor-insulator boundaries; silicon; wafer bonding; SOI MOSFET; Si; Si direct bonding; breakdown voltage; drain current characteristics; grounded body potential; grounded p+ polysilicon; n-channel SOI MOSFET; nonfloating body; substrate floating effect elimination; Board of Directors; Boron; Cities and towns; Fabrication; Furnaces; Large Hadron Collider; MOSFET circuits; Mirrors; Silicon; Wafer bonding;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344574
