Title :
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices
Author :
Kuo, J.B. ; Tang, M.C. ; Sim, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper reports an analytical threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at the top of the field oxide
Keywords :
Ge-Si alloys; insulated gate field effect transistors; semiconductor device models; semiconductor materials; semiconductor-insulator boundaries; silicon; simulation; PISCES simulation; Si; SiGe; SiGe-channel PMOS devices; analytical model; back gate bias dependent model; conduction channel; field oxide; threshold voltage model; ultra-thin SOI PMOS devices; Analytical models; Germanium silicon alloys; MOS devices; Performance analysis; Poisson equations; Predictive models; Semiconductor thin films; Silicon germanium; Substrates; Threshold voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344577
