Title :
An analysis of threshold voltage variation in thin-film SOI MOSFETs
Author :
Masui, Shoichi ; Tachimori, Masaharu
Author_Institution :
Nippon Steel Corp., Sagamihara, Japan
Abstract :
The statistical variation of the threshold voltage in SOI MOSFETs can be calculated using the probability distribution of the threshold voltage assuming that device parameters can be characterized with a Gaussian distribution. In order to evaluate the relative importance in device parameters and obtain the worst case analysis. however. it would be effective to express the variation in an analytical form. In this paper, we present analytical expressions of the threshold voltage variation for thin-film SOI and bulk MOSFETs, and discuss influences by SOI doping density NSOI and SOI film thickness tSOI
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; thin film transistors; Gaussian distribution; SOI doping density; SOI film thickness; bulk MOSFETs; device parameters; thin-film SOI MOSFETs; threshold voltage variation; worst case analysis; Capacitance; Doping; Equations; Gaussian distribution; MOSFETs; Probability distribution; Steel; Substrates; Threshold voltage; Transistors;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344578
