An analysis of threshold voltage variation in thin-film SOI MOSFETs

Author

Masui, Shoichi ; Tachimori, Masaharu

Author_Institution

Nippon Steel Corp., Sagamihara, Japan

fYear

1993

fDate

5-7 Oct 1993

Firstpage

88

Lastpage

89

Abstract

The statistical variation of the threshold voltage in SOI MOSFETs can be calculated using the probability distribution of the threshold voltage assuming that device parameters can be characterized with a Gaussian distribution. In order to evaluate the relative importance in device parameters and obtain the worst case analysis. however. it would be effective to express the variation in an analytical form. In this paper, we present analytical expressions of the threshold voltage variation for thin-film SOI and bulk MOSFETs, and discuss influences by SOI doping density N_SOI and SOI film thickness t_SOI

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; thin film transistors; Gaussian distribution; SOI doping density; SOI film thickness; bulk MOSFETs; device parameters; thin-film SOI MOSFETs; threshold voltage variation; worst case analysis; Capacitance; Doping; Equations; Gaussian distribution; MOSFETs; Probability distribution; Steel; Substrates; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344578

Filename

344578