Title :
Convergence estimation for stationary ensemble Monte Carlo simulations
Author :
Jungemann, C. ; Yamaguchi, S. ; Goto, H.
Author_Institution :
Inst. fur Theor. Elektrotech. und Microelektron., Bremen Univ., Germany
Abstract :
A criterion for the convergence of Monte Carlo simulations is necessary to ensure the reliability of the results and to guarantee efficiency. Due to the finite scattering rate in Monte Carlo simulations all quantities are in general correlated in time. This makes the estimation of the stochastic error of the sampled statistics difficult. In this work the theoretical basis of a method found in literature is explored which allows one to calculate the stochastic error of stationary Ensemble Monte Carlo simulations and which requires only a rough estimate of the magnitude of the largest correlation time of the sampled quantities. The feasibility of the method is demonstrated by application to substrate current calculations for nMOSFETs.
Keywords :
MOSFET; Monte Carlo methods; convergence of numerical methods; semiconductor device models; stochastic processes; convergence estimation; correlation time; nMOSFETs; sampled quantities; sampled statistics; stationary ensemble Monte Carlo simulations; stochastic error; substrate current calculations; Convergence; Electromagnetic compatibility; Error analysis; Hot carrier effects; MOSFETs; Particle scattering; Postal services; Reliability theory; Statistics; Stochastic processes;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621374