DocumentCode
2283815
Title
Generation lifetime measurements in fully depleted enhancement and accumulation mode SOI MOSFETs
Author
Sinha, S.P. ; Zaleski, A. ; Ioannou, D.E. ; Brady, F.
Author_Institution
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fYear
1993
fDate
5-7 Oct 1993
Firstpage
80
Lastpage
81
Abstract
In this work we present a unified analysis for both enhancement and accumulation mode devices, by considering the temporal variation of the quasi-Fermi levels. This leads to an accurate determination of the generation volume, and to Zerbst-type expressions for the drain current transients for enhancement equation and accumulation equation mode devices
Keywords
Fermi level; carrier lifetime; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; Zerbst-type expressions; accumulation mode SOI MOSFETs; drain current transients; enhancement mode SOI MOSFETs; generation lifetime measurements; generation volume; quasi-Fermi levels; temporal variation; Analytical models; DNA; Data analysis; Electric variables measurement; Electron devices; Equations; MOSFETs; Numerical analysis; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344582
Filename
344582
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