Title :
Generation lifetime measurements in fully depleted enhancement and accumulation mode SOI MOSFETs
Author :
Sinha, S.P. ; Zaleski, A. ; Ioannou, D.E. ; Brady, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
In this work we present a unified analysis for both enhancement and accumulation mode devices, by considering the temporal variation of the quasi-Fermi levels. This leads to an accurate determination of the generation volume, and to Zerbst-type expressions for the drain current transients for enhancement equation and accumulation equation mode devices
Keywords :
Fermi level; carrier lifetime; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; Zerbst-type expressions; accumulation mode SOI MOSFETs; drain current transients; enhancement mode SOI MOSFETs; generation lifetime measurements; generation volume; quasi-Fermi levels; temporal variation; Analytical models; DNA; Data analysis; Electric variables measurement; Electron devices; Equations; MOSFETs; Numerical analysis; Transient analysis; Voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344582
