Title :
Growing reliable gate oxides on thick film SOI substrates
Author :
Yallup, Kevin ; Creighton, Oliver
Author_Institution :
Analog Devices, Limerick, Ireland
Abstract :
One of the key elements of a reliable CMOS process is a robust, defect free gate oxide. The formation of such layers on bulk substrates is a topic that has been studied for many years and has reached an advanced state of understanding. In contrast the growth of reliable gate oxides on either thick or thin film SOI substrates is considerably less well understood.This paper discusses the formation of gate oxides on thick film SOI substrates. Two topics have been covered in this study, long term reliability of the oxide and early life failure rate of the oxide
Keywords :
CMOS integrated circuits; SIMOX; circuit reliability; failure analysis; integrated circuit technology; integrated circuit testing; CMOS process; SIMOX; early life failure rate; gate oxides; long term reliability; thick film SOI substrates; Breakdown voltage; CMOS process; Current measurement; Electric breakdown; MOS capacitors; Stress; Substrates; Testing; Thick films; Wafer bonding;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344583
