Title :
Derivation of the full-wave equivalent model of via hole in a two-layered substrate
Author :
Shen, Zhongxiang ; Zhang, Qi
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper presents closed-form expressions for a equivalent circuit model of a via hole in a two-layered dielectric substrate. Analytical expressions are obtained from the formally exact mode-matching formulation of the problem. Numerical results obtained by our closed-form expressions for the scattering parameters are compared to those by Ansoft´s high frequency structure simulator (HFSS). Excellent agreement between them is observed, which verifies the validity of our derived expressions.
Keywords :
S-parameters; equivalent circuits; integrated circuit interconnections; mode matching; Ansoft high frequency structure simulator; HFSS; analytical expressions; closed-form expressions; equivalent circuit model; formally exact mode-matching formulation; full-wave equivalent model; scattering parameters; two-layered dielectric substrate; two-layered substrate; via hole; Dielectric substrates; Electromagnetic waveguides; Equivalent circuits; Integrated circuit modeling; Numerical models; Scattering parameters; Substrates;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE
Conference_Location :
Hanzhou
Print_ISBN :
978-1-4673-2288-1
Electronic_ISBN :
2151-1225
DOI :
10.1109/EDAPS.2011.6213745
