Title :
Hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET´s
Author :
Zhang, Binglong ; Ma, T.P. ; Wang, L.K.
Author_Institution :
Center for Microelectron. Mater. & Structures, Yale Univ., New Haven, CT, USA
Abstract :
Hot-carrier effects in enhancement-mode thin-film SOI/NMOSFET´s have been studied quite extensively, but similar studies in accumulation-mode devices are still lacking. This paper will report hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET´s. Changes in both front- and back-channel transistor parameters are discussed. One particularly interesting effect is the increased drain-source breakdown voltage when measured in the reverse mode after hot-carrier damage. A model based on the increased hole/electron recombination rate due to hot-carrier induced back interface traps will be proposed to explain the effect
Keywords :
electric breakdown of solids; electron traps; electron-hole recombination; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; thin film transistors; accumulation-mode thin-film SOI/NMOSFETs; back-channel transistor parameters; drain-source breakdown voltage; front-channel transistor parameters; hole/electron recombination rate; hot-carrier damage; hot-carrier effects; interface traps; model; reverse mode; Charge carrier processes; Electron traps; Hot carrier effects; Hot carriers; MOSFET circuits; Particle measurements; Spontaneous emission; Thin film devices; Transistors; Voltage measurement;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344585
