The Parameters Identification and Validation for IGBT Based on Optimization Algorithm

Author

Yanxia, GAO ; Yingying, MIAO ; Shuibao, GUO ; Daohong, Wang

Author_Institution

Dept. of Autom., Shanghai Univ.

fYear

2006

fDate

12-14 Nov. 2006

Firstpage

91

Lastpage

95

Abstract

IGBT (insulated gate bipolar transistor) is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems using theses devices, model and model parameters are needed for use in circuit simulations. This paper presents a procedure for identifying the most IGBT models parameters. As an example, the results of identified parameters of BUP302 are given. Based on the identification, the paper presents the method for parameters validation. At last, the conclusion was given.

Keywords

insulated gate bipolar transistors; optimisation; parameter estimation; semiconductor device models; IGBT models; insulated gate bipolar transistor; optimization algorithm; parameter identification; Circuit simulation; Educational programs; Equations; Equivalent circuits; Insulated gate bipolar transistors; Mathematical model; Parameter estimation; Parameter extraction; Power electronics; Power system modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Systems and Applications, 2006. ICPESA '06. 2nd International Conference on

Conference_Location

Hong Kong

Print_ISBN

962-367-544-5

Type

conf

DOI

10.1109/PESA.2006.343077

Filename

4147790