Title :
Substrate current fluctuation under low drain voltages in Si-MOSFET´s
Author :
Sano, N. ; Natori, K.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
Abstract :
It is shown that anisotropy manifested by the wave-vector dependent impact ionization rates in Si leads to large fluctuation of the substrate current in Si-MOSFET´s. This is especially true at low drain voltages under which the ionization events take place near ionization threshold, where anisotropy is greatest.
Keywords :
MOSFET; elemental semiconductors; impact ionisation; semiconductor device reliability; silicon; MOSFET; Si; anisotropy; drain voltages; ionization threshold; substrate current fluctuation; wave-vector dependent impact ionization; Anisotropic magnetoresistance; Electrons; Fluctuations; Impact ionization; Low voltage; Physics; Pulse generation; Semiconductor device reliability; Semiconductor devices; Substrates;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621375
