Material properties of plasma-thinned bonded SOI wafers

Author

Feng, T. ; Matloubian, M. ; Mathur, D.P. ; Mumola, P.B. ; Gardopee, G.J.

Author_Institution

Hughes Danbury Otical Syst. Inc., Danbury, CT, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

62

Lastpage

63

Abstract

Gate-oxide breakdown measurements were made to determine the quality of the Si surface of plasma-thinned Si wafers. Circular MOS capacitors having a thermal oxide of 190 A were fabricated on unprocessed bulk Si wafers and plasma-thinned wafers. The distribution of gate-oxide breakdown voltages for 250-μm diameter MOS capacitors fabricated on a bulk Si wafer and on a plasma-thinned bulk Si wafer are shown. The similarity between the breakdown distributions is an indication that the AcuThin wafer thinning process does not degrade the Si surface quality. Based on these and other results to be presented, we believe that this plasma etching process for thinning bonded Si wafers does not cause any surface or subsurface damage which could adversely impact device performance, i.e., it preserves the bulk silicon material qualities

Keywords

electric breakdown of solids; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; silicon; sputter etching; wafer bonding; 250 micron; AcuThin wafer thinning process; Si; Si surface; bonded SOI wafers; circular MOS capacitors; device performance; gate-oxide breakdown measurements; plasma etching process; subsurface damage; thermal oxide; Degradation; Electric breakdown; MOS capacitors; Material properties; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344591

Filename

344591