• DocumentCode
    2283995
  • Title

    PDN impedance modeling of 3D system-in-package

  • Author

    Oizono, Yoshiaki ; Nabeshima, Yoshitaka ; Okumura, Takafumi ; Sudo, Toshio ; Sakai, Atsushi ; Ikeda, Hiroaki

  • Author_Institution
    Shibaura-Inst. of Technol., Tokyo, Japan
  • fYear
    2011
  • fDate
    12-14 Dec. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Power supply impedance of power distribution network (PDN) for a 3D system-in-package (SiP) has been investigated. The 3D SiP consisted of 3 stacked chips and an organic package substrate. These three chips were a memory chip on the top, Si interposer in the middle, and a logic chip on the bottom. The size of each chip was the same, and 9.93 mm by 9.93 mm. A large number of through silicon vias (TSV´s) were formed to the silicon interposer and the logic chip. Next, the 3 stacked chips were assembled on the organic package substrate, whose size was 26 mm by 26 mm. The PDN impedance for each chip was extracted by using XcitePI (Sigrity Inc.). Then, the PDN impedance for the organic package substrate was extracted by using SIwave (Ansys Inc.). Finally, the total PDN impedance was synthesized. In this paper, the PDN impedances of the memory chip, Si interposer, and the logic chip were calculated respectively, and then the total PDN impedance was synthesized to estimate the power supply disturbance due to the anti-resonance peak.
  • Keywords
    logic circuits; substrates; system-in-package; three-dimensional integrated circuits; 3D system-in-package; PDN impedance modeling; XcitePI; antiresonance peak; logic chip; organic package substrate; power distribution network; power supply disturbance; power supply impedance; silicon interposer; stacked chips; through silicon vias; Bandwidth; Impedance; Silicon; Solid modeling; Substrates; Three dimensional displays; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE
  • Conference_Location
    Hanzhou
  • ISSN
    2151-1225
  • Print_ISBN
    978-1-4673-2288-1
  • Electronic_ISBN
    2151-1225
  • Type

    conf

  • DOI
    10.1109/EDAPS.2011.6213751
  • Filename
    6213751