DocumentCode
2284143
Title
Crystallographic effects in implantation of oxygen for SIMOX
Author
Anc, M.J. ; Cordts, B.F. ; Allen, L.P. ; Krull, W.A. ; Guerra, M.A.
Author_Institution
Ibis Technol. Corp., Danvers, MA, USA
fYear
1993
fDate
5-7 Oct 1993
Firstpage
46
Lastpage
47
Abstract
In this paper we will discuss aspects of directional or crystallographic effects in implantation of oxygen, with emphasis on the possibility of effects of pinhole formation due to the channeling phenomenon, and application of the intentionally channeled implant to obtain better properties of thin film layers
Keywords
SIMOX; channelling; elemental semiconductors; ion implantation; oxygen; silicon; SIMOX; Si:O; channeling phenomenon; crystallographic effects; directional effects; intentionally channeled implant; oxygen implantation; pinhole formation; thin film layers; Copper; Crystalline materials; Crystallography; Implants; Ion beams; Oxygen; Silicon; Substrates; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344599
Filename
344599
Link To Document