Comparative materials characterization of SOI wafers produced by competing technologies

Author

Feijoo, D. ; Mills, A.P. ; Kortan, A.R. ; Sapjeta, J.B. ; Hsieh, C.M. ; Carver, G.E.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

38

Lastpage

39

Abstract

In this work we have used established and novel analysis techniques to compare SOI wafers produced by wafer-bonding and different thinning techniques such as chemical-mechanical thinning, plasma etching and wet etching, and by separation-by-implanted-oxygen (SIMOX). The techniques employed were optical-beam-induced reflectance, positron annihilation, atomic force microscopy and X-ray diffractometry

Keywords

SIMOX; X-ray diffraction examination of materials; atomic force microscopy; etching; positron annihilation in liquids and solids; reflectivity; semiconductor-insulator boundaries; silicon; sputter etching; wafer bonding; SIMOX; SOI wafers; Si-SiO₂; X-ray diffractometry; atomic force microscopy; chemical-mechanical thinning; optical-beam-induced reflectance; plasma etching; positron annihilation; wafer-bonding; wet etching; Atom optics; Atomic force microscopy; Chemical analysis; Optical materials; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma x-ray sources; Reflectivity; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344603

Filename

344603