Title :
Shallow oxygen-related donors in bonded and etchback silicon on insulator structures
Author :
Warren, W.L. ; Fleetwood, D.M. ; Schwank, J.R. ; Shaneyfelt, M.R. ; Winokur, P.S. ; Devine, R.A.B. ; Maszara, W.P. ; McKitterick, J.B.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We have investigated fundamental material issues that may impact device performance in bonded and etchback SOI (BESOI) wafers using electron paramagnetic resonance (EPR) measurements. We report a new defect identified as an oxygen-related donor in the virgin Si substrates. The donor appears to result from the anneal during the bonding process, not from the actual bonding procedure
Keywords :
elemental semiconductors; impurity electron states; oxygen; paramagnetic resonance; paramagnetic resonance of ions and impurities; semiconductor-insulator boundaries; silicon; wafer bonding; BESOI wafers; Si substrates; Si:O; anneal; bonded and etchback silicon on insulator structures; bonding; defect; electron paramagnetic resonance; shallow oxygen-related donors; Aerospace materials; Bonding processes; Corona; Etching; Magnetic field measurement; Paramagnetic materials; Paramagnetic resonance; Silicon on insulator technology; Spectroscopy; Wafer bonding;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344606
