Nanoelectronic atomization for atomic emission spectroscopy on a chip

Author

Yoon, Sung Jun ; Park, Hojin ; Srisonphan, Siwapon ; Jung, Yun Suk ; Kim, Hong Koo

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Pittsburgh, Pittsburgh, PA, USA

fYear

2010

fDate

17-20 Aug. 2010

Firstpage

262

Lastpage

266

Abstract

We report electrically-induced, explosive atomization of metals and analytes at nanoscale. The phenomenon involves formation of highly-localized nanoscale leakage channels in the oxide layer of a metal-oxide-semiconductor (MOS) structure under pulsed drive, ballistic transport of injected electrons in the nanoscale void channels, impact ionization of metal atoms, and explosive atomization of metal and adjacent analyte materials. The fragmented atoms produce atomic luminescence from radiative transitions in the relaxation process. This electrically induced explosive atomization through nanochannels offers a potential for nanoscale elemental/trace analysis on a chip.

Keywords

MIS structures; atomic emission spectroscopy; ballistic transport; elemental semiconductors; impact ionisation; luminescence; nanoelectronics; silicon; silicon compounds; silver; Ag-SiO₂-Si; MOS structure; analyte materials; atomic emission spectroscopy; atomic luminescence; ballistic transport; electrically-induced atomization; explosive atomization; highly-localized nanoscale leakage channels; impact ionization; injected electrons; metal-oxide-semiconductor structure; nanoelectronic atomization; nanoscale void channels; radiative transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Conference_Location

Seoul

ISSN

1944-9399

Print_ISBN

978-1-4244-7033-4

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2010.5697748

Filename

5697748