• DocumentCode
    2284313
  • Title

    Band-level control for high-performance colloidal quantum-dot LED

  • Author

    Cho, Kyung-Sang ; Choi, Byoung Lyoung ; Lee, Eun Kyung ; Kim, Tae-Ho ; Lee, Sang Jin ; Kim, Jong Min

  • Author_Institution
    Frontier Res. Lab., Samsung Electron., Suwon, South Korea
  • fYear
    2010
  • fDate
    17-20 Aug. 2010
  • Firstpage
    275
  • Lastpage
    280
  • Abstract
    Here we report hybrid organic/inorganic quantum-dot LED with high-performance. Use of sol-gel TiO2 as electron transport layer allows the device to be fabricated with all-solution process and have more efficient energy band structure for carrier injection and confinement. Quantum dot layer was crosslinked and thermally annealed to enhance the device performance. Quantum dot crosslinking not only made all-solution process feasible but also enhanced hole injection by shifting valance band of 0.3~0.6 eV, resulting in better charge balance. The degree of band-level shift depends on the asymmetric adsorption of ligand which might cause the dipole alignment of QD layer through the hole transport. The resulting device showed a high luminance (>;10,000 cd/m2), low turn on voltage (1.9 V), and the high power efficiency (2.41 lm/W). Incorporation of the technology into a display device with an active matrix drive backplane for the first time suggests that the approach is promising for high performance, easy-to-fabricate, large area displays and illumination sources.
  • Keywords
    annealing; light emitting diodes; organic-inorganic hybrid materials; semiconductor quantum dots; titanium compounds; valence bands; TiO2; asymmetric adsorption; band-level control; band-level shift; carrier confinement; carrier injection; charge balance; colloidal quantum-dot LED; dipole alignment; electron transport layer; energy band structure; high power efficiency; hole injection; hole transport; hybrid organic-inorganic quantum-dot LED; thermal annealing; turn on voltage; valance band;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
  • Conference_Location
    Seoul
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-7033-4
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2010.5697751
  • Filename
    5697751