DocumentCode
2284313
Title
Band-level control for high-performance colloidal quantum-dot LED
Author
Cho, Kyung-Sang ; Choi, Byoung Lyoung ; Lee, Eun Kyung ; Kim, Tae-Ho ; Lee, Sang Jin ; Kim, Jong Min
Author_Institution
Frontier Res. Lab., Samsung Electron., Suwon, South Korea
fYear
2010
fDate
17-20 Aug. 2010
Firstpage
275
Lastpage
280
Abstract
Here we report hybrid organic/inorganic quantum-dot LED with high-performance. Use of sol-gel TiO2 as electron transport layer allows the device to be fabricated with all-solution process and have more efficient energy band structure for carrier injection and confinement. Quantum dot layer was crosslinked and thermally annealed to enhance the device performance. Quantum dot crosslinking not only made all-solution process feasible but also enhanced hole injection by shifting valance band of 0.3~0.6 eV, resulting in better charge balance. The degree of band-level shift depends on the asymmetric adsorption of ligand which might cause the dipole alignment of QD layer through the hole transport. The resulting device showed a high luminance (>;10,000 cd/m2), low turn on voltage (1.9 V), and the high power efficiency (2.41 lm/W). Incorporation of the technology into a display device with an active matrix drive backplane for the first time suggests that the approach is promising for high performance, easy-to-fabricate, large area displays and illumination sources.
Keywords
annealing; light emitting diodes; organic-inorganic hybrid materials; semiconductor quantum dots; titanium compounds; valence bands; TiO2; asymmetric adsorption; band-level control; band-level shift; carrier confinement; carrier injection; charge balance; colloidal quantum-dot LED; dipole alignment; electron transport layer; energy band structure; high power efficiency; hole injection; hole transport; hybrid organic-inorganic quantum-dot LED; thermal annealing; turn on voltage; valance band;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location
Seoul
ISSN
1944-9399
Print_ISBN
978-1-4244-7033-4
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2010.5697751
Filename
5697751
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