DocumentCode :
2284341
Title :
Synthesis and optical properties of ZnO nanowires for nanophotonics
Author :
Kim, Seongsin Margaret ; Shen, Gang ; Wilbert, David S. ; Baughman, William ; Dawahre, Nabil ; Murphy, Michael M. ; York, Matthew ; Kim, Jongsu ; Kung, Patrick
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alabama, Tuscaloosa, AL, USA
fYear :
2010
fDate :
17-20 Aug. 2010
Firstpage :
285
Lastpage :
288
Abstract :
High quality ZnO nanowires were synthesized by chemical vapor deposition using both a catalyst-assisted vapor-liquid-solid and a catalyst-free vapor-solid deposition approach. And their optical properties studied using photoluminescence and Raman spectroscopy combined with confocal laser scanning microscopy. Strong UV near band edge along with defect related visible luminescence emissions were observed and their relative intensity compared. We report here the growth of ZnO nanowires by chemical vapor deposition using both a catalyst-assisted vapor-liquid-solid and a catalyst-free vapor-solid deposition approach. The nanowires were characterized through scanning electron microscopy, x-ray diffraction, optical absorption, micro-photoluminescence, confocal Raman spectroscopy, and Terahertz time domain spectroscopy.
Keywords :
II-VI semiconductors; Raman spectra; X-ray diffraction; absorption coefficients; chemical vapour deposition; nanofabrication; nanophotonics; nanowires; photoluminescence; scanning electron microscopy; semiconductor growth; terahertz wave spectra; ultraviolet spectra; wide band gap semiconductors; zinc compounds; UV near band edge; X-ray diffraction; ZnO; catalyst-assisted vapor-liquid-solid deposition; catalyst-free vapor-solid deposition; chemical vapor deposition; confocal Raman spectroscopy; confocal laser scanning microscopy; defect related visible luminescence emissions; microphotoluminescence; nanophotonics; nanowires; optical absorption; optical properties; scanning electron microscopy; terahertz time domain spectroscopy; CVD; Raman; Terahertz; ZnO; nanowire; photoluminescence; semiconductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
ISSN :
1944-9399
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2010.5697753
Filename :
5697753
Link To Document :
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