Title :
Improvement of the breakdown field of SIMOX buried oxide layers
Author :
Nakashima, S. ; Harada, M. ; Tsuchiya, T.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
A high-quality SIMOX wafer with an extremely low dislocation density, less than 300 cm-2 has been formed at low doses of between 3.0 x 1017 and 5.0 x 1017 cm-2. This wafer should open the way to practical fabrication of SIMOX ULSIs. The buried oxide layer of this wafer, however, has a relatively low breakdown electric field strength of around 4 MV/cm. The authors clarify the cause of this low breakdown field and propose a method for improving it
Keywords :
SIMOX; VLSI; annealing; dislocation density; electric breakdown of solids; integrated circuit technology; ion implantation; SIMOX ULSI circuits; SIMOX buried oxide layers; Si-SiO2; breakdown field improvement; electric field strength; fabrication; high-quality SIMOX wafer; low dislocation density; Annealing; Atomic force microscopy; Degradation; Electric breakdown; Fabrication; Laboratories; Large scale integration; Oxygen; Transmission electron microscopy; Ultra large scale integration;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344611
