Title :
New frequency dependent target impedance for DDR3 memory system
Author :
Sasaki, Hayato ; Kanazawa, Masato ; Sudo, Toshio ; Tomishima, Atsushi ; Kaneko, Toshiyuki
Author_Institution :
Shibaura-Inst. of Technol., Tokyo, Japan
Abstract :
Anti-resonance peak in power distribution network (PDN) impedance must be avoided to prevent the interference between signal integrity and power integrity of a system. Conventional criteria of PDN impedance is a target impedance with a constant value over wide frequency range. However, the constant target impedance is not suitable for the high-speed systems, such as DDR-3 memory systems, because it is not cost effective to maintain PDN impedance as low as possible, especially in high frequency range. Furthermore, clock frequencies of modern LSIs already exceed the peak frequency of PDN impedance. In this paper, frequency spectrum of the power supply switching current of the ASIC driver has been used to define the target impedance in the DDR3 memory system. Frequency dependent target impedance has been obtained from the switching current spectrum. Degradation of signal integrity, such as eye height and jitter due to anti-resonance peaks have been checked by comparing the frequency dependent target impedance of DDR3 system.
Keywords :
DRAM chips; application specific integrated circuits; driver circuits; interference suppression; jitter; large scale integration; ASIC driver; DDR3 memory system; LSI; PDN impedance; antiresonance peak; clock frequencies; constant target impedance; eye height; frequency dependent target impedance; frequency spectrum; high-speed systems; interference prevention; jitter; power distribution network; power integrity; power supply switching current; signal integrity; Analytical models; Application specific integrated circuits; Frequency dependence; Impedance; Power supplies; Solid modeling; Switches;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE
Conference_Location :
Hanzhou
Print_ISBN :
978-1-4673-2288-1
Electronic_ISBN :
2151-1225
DOI :
10.1109/EDAPS.2011.6213774