• DocumentCode
    2284491
  • Title

    6 inch full field wafer size nanoimprint lithography for photonic crystals patterning

  • Author

    Hornung, Michael ; Ji, Ran ; Verschuuren, Marc ; Van den Laar, Robert

  • Author_Institution
    SUSS MicroTec Lithography GmbH, Garching, Germany
  • fYear
    2010
  • fDate
    17-20 Aug. 2010
  • Firstpage
    339
  • Lastpage
    342
  • Abstract
    The HB-LED market grew rapidly in the last years and will see grater than 50% growth this year. The current applications are dominated by portable device backlighting, e.g. cell phones, PDAs, GPS, laptop etc. In order to open the general lighting market doors the luminous efficiency needs to be improved significantly. Photonic crystal (PhC) structures in LEDs have been demonstrated to enhance light extraction efficiency on the wafer level by researchers. However, there is still a great challenge to fabricate PhC structures on LED wafers cost-effectively. Nanoimprint lithography (NIL) is one promising technology for manufacturing of electronic devices of low nm scale. However, the current NIL techniques with rigid stamps rely strongly on the substrate flatness and the production atmosphere. UV-NIL with flexible stamps, e.g. PDMS stamps, allows the large-area imprint in a single step and is less-sensitive to the production atmosphere. Unfortunately, the resolution is normally limited due to stamp distortion caused by imprint pressure. The NIL technique developed by Philips Research and SUSS MicroTec, substrate conformal imprint lithography (SCIL), bridges the gap between UV-NIL with rigid stamp for best resolution and soft stamp for large-area patterning.
  • Keywords
    light emitting diodes; nanolithography; nanopatterning; photonic crystals; soft lithography; ultraviolet lithography; LED; UV-NIL; flexible stamps; full field wafer size nanoimprint lithography; large-area imprint; light extraction efficiency; luminous efficiency; photonic crystal structures; photonic crystals patterning; portable device backlighting; size 6 inch; substrate conformal imprint lithography; wafer level;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
  • Conference_Location
    Seoul
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-7033-4
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2010.5697760
  • Filename
    5697760