DocumentCode
2284491
Title
6 inch full field wafer size nanoimprint lithography for photonic crystals patterning
Author
Hornung, Michael ; Ji, Ran ; Verschuuren, Marc ; Van den Laar, Robert
Author_Institution
SUSS MicroTec Lithography GmbH, Garching, Germany
fYear
2010
fDate
17-20 Aug. 2010
Firstpage
339
Lastpage
342
Abstract
The HB-LED market grew rapidly in the last years and will see grater than 50% growth this year. The current applications are dominated by portable device backlighting, e.g. cell phones, PDAs, GPS, laptop etc. In order to open the general lighting market doors the luminous efficiency needs to be improved significantly. Photonic crystal (PhC) structures in LEDs have been demonstrated to enhance light extraction efficiency on the wafer level by researchers. However, there is still a great challenge to fabricate PhC structures on LED wafers cost-effectively. Nanoimprint lithography (NIL) is one promising technology for manufacturing of electronic devices of low nm scale. However, the current NIL techniques with rigid stamps rely strongly on the substrate flatness and the production atmosphere. UV-NIL with flexible stamps, e.g. PDMS stamps, allows the large-area imprint in a single step and is less-sensitive to the production atmosphere. Unfortunately, the resolution is normally limited due to stamp distortion caused by imprint pressure. The NIL technique developed by Philips Research and SUSS MicroTec, substrate conformal imprint lithography (SCIL), bridges the gap between UV-NIL with rigid stamp for best resolution and soft stamp for large-area patterning.
Keywords
light emitting diodes; nanolithography; nanopatterning; photonic crystals; soft lithography; ultraviolet lithography; LED; UV-NIL; flexible stamps; full field wafer size nanoimprint lithography; large-area imprint; light extraction efficiency; luminous efficiency; photonic crystal structures; photonic crystals patterning; portable device backlighting; size 6 inch; substrate conformal imprint lithography; wafer level;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location
Seoul
ISSN
1944-9399
Print_ISBN
978-1-4244-7033-4
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2010.5697760
Filename
5697760
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