Title :
Broadband filter based on stub-loaded ridge substrate integrated waveguide (SIW) in low temperature cofired ceramic (LTCC)
Author :
Wu, Lin-Sheng ; Mao, Junfa ; Yin, Wen-Yan ; Zhou, Xi-Lang
Author_Institution :
Key Lab. of Minist. of Educ. for Res. of Design & EMC of High Speed Electron. Syst., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
A new broadband bandpass filter is proposed using stub-loaded ridge substrate integrated waveguide (SIW). The ridge SIWs loaded with and without stubs play the roles of resonators and inductive coupling structures, respectively. Since the cutoff frequency of ridge SIW is designed within the passband, both its propagating and evanescent modes are utilized to provide a strong coupling over the whole passband. The proposed filter has a multilayer configuration and can be fabricated with a standard low temperature cofired ceramic (LTCC) technology. In order to validate our design, a LTCC filter prototype is developed with a central frequency of 19 GHz and a fractional bandwidth of 40%. It has a compact volume of 6.89×2.85×0.79 mm3 and a low measured in-band insertion loss of 1.2 dB. The good performance of our proposed SIW filter has been demonstrated by the reasonable agreement obtained between the simulated and measured S-parameters. Its potential application for system in package is expected.
Keywords :
S-parameters; band-pass filters; ceramic packaging; resonator filters; ridge waveguides; substrate integrated waveguides; system-in-package; waveguide filters; LTCC; S-parameters; SIW; broadband bandpass filter; evanescent modes; frequency 19 GHz; inductive coupling structures; loss 1.2 dB; low temperature cofired ceramic; multilayer configuration; resonator filters; size 0.79 mm; size 2.85 mm; size 6.89 mm; stub-loaded ridge substrate integrated waveguide; system-in-package; Band pass filters; Couplings; Cutoff frequency; Electromagnetic waveguides; Passband; Resonator filters; Substrates;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE
Conference_Location :
Hanzhou
Print_ISBN :
978-1-4673-2288-1
Electronic_ISBN :
2151-1225
DOI :
10.1109/EDAPS.2011.6213780