Title :
Sub-domain solution of the Boltzmann equation in MOS devices by means of spherical harmonics expansion
Author :
Pierantoni, A. ; Vecchi, M.C. ; Gnudi, A.
Author_Institution :
Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
A sub-domain solution technique of the Boltzmann Transport Equation (BTE) based on the Spherical Harmonics Expansion (SHE) method is presented, and applied in the channel region of MOSFETs. It is demonstrated that by means of suitable boundary conditions the "exact" solution is well approximated, with an appreciable increase of numerical efficiency.
Keywords :
Boltzmann equation; MOSFET; semiconductor device models; Boltzmann transport equation; MOS device; MOSFET; boundary condition; numerical efficiency; spherical harmonics expansion; sub-domain solution; Boltzmann equation; Boundary conditions; Distribution functions; Electron optics; FETs; MOS devices; Monte Carlo methods; Optical scattering; Phonons; Semiconductor device noise;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621379
