DocumentCode :
2285164
Title :
A new numerical formulation for thermal oxidation
Author :
Rao, V.S. ; Hughes, T.J.R. ; Kan, E. ; Dutton, R.W.
Author_Institution :
Stanford Univ., CA, USA
fYear :
1997
fDate :
8-10 Sept. 1997
Firstpage :
237
Lastpage :
240
Abstract :
A new numerical formulation to model oxidation is proposed. It includes discontinuous shape functions to model two material diffusion-reaction, level-set based interface evolution, viscoelastic constitutive relations, finite deformation and large expansion. Well-posedness and numerical stability of the numerical methods are investigated in detail. Stress-dependent oxidation and residual stresses can be treated in one, two and three dimensions. Traditional gridding problems associated with moving boundaries are resolved by using an Eulerian representation of the interface. The constitutive model is thermodynamically consistent and preserves fundamental properties like objectivity of constitutive equations throughout the process.
Keywords :
finite element analysis; oxidation; semiconductor process modelling; Eulerian theory; deformation; diffusion-reaction; expansion; gridding; interface evolution; level set; moving boundary; numerical model; numerical stability; objectivity; residual stress; shape function; stress dependence; thermal oxidation; thermodynamic consistency; viscoelastic constitutive relation; well-posedness; Deformable models; Elasticity; Equations; Numerical models; Numerical stability; Oxidation; Piecewise linear approximation; Residual stresses; Shape; Viscosity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
Type :
conf
DOI :
10.1109/SISPAD.1997.621381
Filename :
621381
Link To Document :
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