Title :
20 GHz 8b multiplexer implemented with 0.5 /spl mu/m WNx/W-gate GaAs MESFETs
Author :
Seshita, T. ; Ikeda, Y. ; Wakimoto, Hiroki ; Ishida, K. ; Terada, T. ; Matsunaga, T. ; Suzuki, T. ; Hashimoto, T. ; Kitaura, Y. ; Uchitomi, N.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
High-speed multiplexers (MUXs) are key components in optical-fiber communication systems. MUXs with a higher operating frequency are desirable to realize increases in data transmission capacity. Furthermore, MUXs with a higher number of bits are also desirable to reduce the number of high-speed system components. This 20 GHz 8b MUX is based on source-coupled FET logic (SCFL) and fabricated using a 0.5 /spl mu/m GaAs MESFET process based on conventional optical lithography and ion implantation. This is the fastest reported 8b MUX.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; multiplexing; multiplexing equipment; optical communication equipment; photolithography; 0.5 mum; 20 GHz; 8 bit/s; GaAs; GaAs MESFETs; MUXs; data transmission capacity; high-speed multiplexers; high-speed system components; higher operating frequency; ion implantation; multiplexer; optical lithography; optical-fiber communication systems; source-coupled FET logic; Data communication; FETs; Frequency; Gallium arsenide; High speed optical techniques; Logic; MESFETs; Multiplexing; Optical devices; Particle beam optics;
Conference_Titel :
Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-1844-7
DOI :
10.1109/ISSCC.1994.344682
