DocumentCode
2285271
Title
Modeling reverse short channel and narrow width effects in small size MOSFET´s for circuit simulation
Author
Yuhua Cheng ; Sugii, T. ; Kai Chen ; Zhihong Liu ; Min-Chie Jeng ; Chenming Hu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
249
Lastpage
252
Abstract
Modeling of small size MOSFETs and experimental verification of the model using devices with varying pocket implant processes are presented. The results show that the model can describe reverse short channel and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12 /spl mu/m regime.
Keywords
MOS integrated circuits; MOSFET; VLSI; circuit analysis computing; integrated circuit design; ion implantation; isolation technology; 0.12 micron; MOSFET; channel lengths; circuit simulation; narrow width effects; pocket implant processes; reverse short channel effects; saturation current; threshold voltage; Circuit simulation; Data mining; Doping; Immune system; Implants; Length measurement; MOSFET circuits; Semiconductor process modeling; Solid modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621384
Filename
621384
Link To Document